Samsung today announced that it has started production of industry’s first NAND flash chip featuring high-performance toggle DDR 2.0 interface. The new NAND flash chip features a 64-gigabit (Gb) density, made possible by using an advanced 20 nanometer (nm) class process technology. The chip is designed to support the high-performance requirements of mobile devices such as smartphones, tablets and solid-state drives (SSDs).

Equipped with a toggle DDR (Double Data Rate) 2.0 interface, the new 64Gb MLC chip can transmit data at a bandwidth of up to 400 megabit per second (Mbps). This provides a 10-fold increase over the 40Mbps Single Data Rate (SDR) NAND flash memory in widespread use today, and a three-fold boost over 133Mbps toggle DDR 1.0, 32Gb NAND flash memory, which Samsung was first to produce in 2009.

"With this 20nm-class, 64Gb, toggle DDR 2.0 NAND, Samsung is leading the market, which is evolving to fourth-generation smartphones and SATA 6Gbps SSDs," said Wanhoon Hong, executive vice president, memory sales & marketing, Samsung Electronics. "We will continue to aggressively develop the world's most advanced toggle DDR NAND flash solutions with higher performance and density, since we see them as vital to enabling a greater diversity of services for mobile phone users worldwide."

The new 64Gb MLC NAND chip offers an approximate 50-percent increase in productivity over 20nm-class 32Gb MLC NAND chips with a toggle DDR 1.0 interface (which Samsung started producing in April last year) and more than doubles the productivity of 30nm-class 32Gb MLC NAND.

Samsung has started sampling the new NAND flash chip and devices based on the chip should come to the market by end of this year.