Hynix Showcases 16GB DDR3 Memory Module at Intel Developer Forum

Submitted by lalit on August 21, 2008 - 6:12pm.

At Intel Developer Forum currently being held in San Francisco, Hynix Semiconductor introduced world’s first 16GB 2-rank DIMM DDR3 memory module. The 16GB capacity was made possible by using MetaRAM’s new DDR3 technology for Registered Dual Inline Memory Modules (R-DIMM). Hynix also announced a 8GB model using the same technology. Hynix claims that by using the MetaRAM’s DDR3 technology the memory capacity in servers and workstations can be increased three times without decreasing the performance.
MetaRAM, the company behind the new technology has also demonstrated a prototype 24GB DDR3 module that works at 1,066 million transfers per seconds (MT/s) in a channel. The company claims that with three 16GB DIMMs transfer rate of 48GB per channel at 1,066 MT/s is possible, compared to the maximum of 16GB per channel achieved by competitors. The new memory chips will be used in future Intel Xeon based workstations and servers.
[Via MacNN]

 

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