Samsung announced that it had produced the world’s first NAND flash memory based on a 30-nanometer manufacturing process. The use of new manufacturing technology known as self-aligned double patterning will allow production of high capacity 64 gigabit chips that can combine to produce a multi-level cell flash of up to 128GB. Samsung expects to start commercial production based on this technology by 2009. This new technology will also decrease production cost as the use of lithography speeds up manufacturing and reduces the effective cost for each complete chip. If you were waiting for 120Gb iPod Touch now you know the date that is 2009.