SanDisk today announced at the ISSCC that it has produced the first 43-nanometer NAND flash, this will double the storage in the same amount of space. The 16-gigabit (2GB) chips are shipping now and the 32-gigabit (4GB) chips will ship in second half of the year. SanDisk also announced the development of a new type of NAND flash memory that can store 3 bits per cell that will provide 20% more usable space than a multi-level cell. The write speed of the new flash chip will be 8MB per second same as the present NAND flash chips. SanDisk has partnered with Toshiba in development of both the technologies and both the technologies should start appearing in devices by second half of 2008.