Last year, when IBM first talked, about MRAM in detail, most of the tech world would have never thought that they will see a chips based on the technology with in one year. But today Toshiba has announced that its work on magnetoresistive random-access memory is almost ready in form of postage stamp size 1Gb (gigabit) MRAM chips. Toshiba uses a technique called spin-RAM, which manipulates the memory’s magnetic polarity using electric currents making it stable against heat fluctuations. Toshiba sees MRAM completely replacing DRAM by 2015. Compared to DRAM, the MRAM is quicker and more power efficient. The MRAM can hold data even when the power supply is turned off. This feature of MRAM will help in designing Computers that would be able to boot up instantly. Toshiba has not said when they plan to start large-scale production of MRAM chips, but they will start sampling MRAM chips by end of 2008.