For past decade there has been lot of talk about the improvements that Nano technology can bring in future. One of the fields that can benefit a lot from Nano tech is a computer. Researchers have already show that Nano tech can improve memory reliability, speed and decrease the over all size of the system. According to the latest research done by scientist at University of Pennsylvania nanowire based information storage device can improve the storage capacity while decreasing the size of the device. Researchers have created a type of nanowire using two phase-change materials that is capable of storing three bit values rather than the usual two. For example memory is stored in binary form as “0” and “1” in devices now, but the new nanowire based system is non-binary and can store “0”, “1”, and “2” resulting in higher capacity storage device. The nanowire designed by UPenn has a core-shell and a cylindrical shell like a coaxial cable, the core is made of germanium, antimony and tellurium and the cylindrical shell is made of germanium and telluride. This allows the nanowire to be in three different states depending on electrical resistances, resulting in storage of three bit per wire. Ritesh Agarwal an assistant professor at UPenn says that manufacturing of these nanowire based devices will also be easier as it can be done via “bottom-up” approaches – using the natural tendency of tiny structures to self assemble into larger structures.
[Via Physorg]