SanDisk has started developing next generation memory technology that will allow greater storage density and increased access speeds. SanDisk is convinced that flash memory will reach its limitations in less than a decade and hence is working on 3D memory technology that it acquired with the purchase of Matrix Semiconductor. While conventional circuits put all the active circuitry on the silicon substrate, SanDisk’s 3D architecture deposits multiple layers of active memory elements so that circuitry extends vertically also. In layman’s term the present flash memory stores data in two-dimensional space, but SanDisk is working on chips that can store data in three-dimensional space resulting in more storage in same amount of space.
Company’s CEO Eli Harari said at this weeks earning conference “SanDisk has been making good, steady progress since our acquisition three years ago of Matrix Semiconductor… We currently have more than 200 issued patents that cover key elements of 3D rewritable memory technology”.
SanDisk has partnered up with Toshiba for development of the new technology. The company already sells a product that uses 3D technology but the device can only be programmed once. SanDisk and Toshiba are working on technology that will allow multiple rewrites of data.
The 3D memory chips won’t come to the market for at least next 5 years. For the mean time SanDisk will continue advancing it flash memory technology. The company will start production of X3 Flash memory chips this year that stores three bits per memory cell in place of present two bits per cell. SanDisk also plans to move to X4 technology allowing four bits per cell by end of 2009.
[Via CNET]